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Si3464DV
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
20
R DS(on) ( Ω )
0.024 at V GS = 4.5 V
0.028 at V GS = 2.5 V
0.030 at V GS = 1.8 V
I D (A) e
8 a
8 a
7.1
Q g (Typ.)
11 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? DC/DC Converters
TSOP-6
Top View
? Load Switch for Portable Applications
D
1
6
D
D
(1, 2, 5, 6)
3 mm D
2
5
D
Marking Code
G
3
4
S
AZ
XXX
Lot Tracea b ility
G
and Date Code
Part # Code
2. 8 5 mm
Orderin g Information: Si3464D V -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
(3)
(4)
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
20
±8
8 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
8 a
7.5 b, c
6.0 b, c
20
3
1.7 b, c
3.6
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.3
2 b, c
W
T A = 70 °C
1.3 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
R thJA
R thJF
50
28
62.5
35
°C/W
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
e. Based on T C = 25 °C.
Document Number: 65712
S10-0218-Rev. A, 25-Jan-10
www.vishay.com
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